Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon

Te-doping of self-catalyzed GaAs nanowires

Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon.

Nanowire diameter has a dramatic effect on the absorption cross-section in the optical domain. The maximum absorption is reached for ideal nanowire morphology within a solar cell device. As a consequence, understanding how to tailor the nanowire diameter and density is extremely important for high-efficient nanowire-based solar cells. In this work, we investigate mastering the diameter and dens...

Carrier thermalization dynamics in single zincblende and wurtzite InP Nanowires.

Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band-to-band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measu...

Spatially resolved study of polarized micro-photoluminescence spectroscopy on single GaAs nanowires with mixed zincblende and wurtzite phases

Field Emission from Self-Catalyzed GaAs Nanowires

We report observations of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements were taken inside a scanning electron microscope chamber with a nano-controlled tungsten tip functioning as anode. Experimental data were analyzed in the framework of the Fowler-Nordheim theory. We demonstrate stable current up to 10-7 A emitted from the tip of single nanowire, with a...